Modeling of IGBT Using Temperature Prediction Method
نویسندگان
چکیده
A temperature prediction method of Insulated Gate Bipolar Transistor (IGBT) module based on autoregressive moving average model is proposed. Historical and current temperature datum of IGBT module is indispensable to the ARMA method, temperature time series is obtained by uniform sampling, and autoregressive (AR) model is constructed. Temperature time series prediction of IGBT module is realized by employing optimal prediction theory of autoregressive moving average (ARMA) module. Experiments results show the effectiveness and the satisfactory precision of the prediction method. KeywordsAutoregressive Model; Insulated Gate Bipolar Transistor; Optimal Prediction; Time Series Analysis Introduction
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